FQP9N30 mosfet equivalent, n-channel mosfet.
* 9.0 A, 300 V, RDS(on) = 450 mW (Max.) @ VGS = 10 V,
ID = 4.5 A
* Low Gate Charge (Typ. 17 nC)
* Low Crss (Typ. 16 pF)
* 100% Avalanche Tested
ABSOLUTE .
This N−Channel enhancement mode power MOSFET is produced
using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switc.
Image gallery
TAGS
Download (Size : 247.80KB)